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CY7C1360C CY7C1362C
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Features
* * * * * * * * * * * * Supports bus operation up to 250 MHz Available speed grades are 250, 200, and 166 MHz Registered inputs and outputs for pipelined operation 3.3V core power supply (VDD) 2.5V/3.3V I/O operation (VDDQ) Fast clock-to-output times -- 2.8 ns (for 250-MHz device) Provide high-performance 3-1-1-1 access rate User-selectable burst counter supporting Intel(R) Pentium(R) interleaved or linear burst sequences Separate processor and controller address strobes Synchronous self-timed writes Asynchronous output enable Single Cycle Chip Deselect
Functional Description[1]
The CY7C1360C/CY7C1362C SRAM integrates 256K x 36 and 512K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to two or four bytes wide as controlled by the Byte Write control inputs. GW when active LOW causes all bytes to be written. The CY7C1360C/CY7C1362C operates from a +3.3V core power supply while all outputs may operate with either a +2.5 or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.
* Available in lead-free 100-Pin TQFP package, lead-free and non lead-free 119-Ball BGA package and 165-Ball FBGA package * TQFP Available with 3-Chip Enable and 2-Chip Enable * IEEE 1149.1 JTAG-Compatible Boundary Scan
Logic Block Diagram - CY7C1362C (512K x 18)
A0, A1, A MODE ADV CLK ADDRESS REGISTER 2 A[1:0]
BURST Q1 COUNTER AND LOGIC CLR Q0
ADSC ADSP DQB,DQPB WRITE REGISTER DQB,DQPB WRITE DRIVER MEMORY ARRAY BWA BWE GW CE1 CE2 CE3 OE ENABLE REGISTER DQA,DQPA WRITE REGISTER DQA,DQPA WRITE DRIVER SENSE AMPS
BWB
OUTPUT REGISTERS
OUTPUT BUFFERS E
DQs DQPA DQPB
PIPELINED ENABLE
INPUT REGISTERS
ZZ
SLEEP CONTROL
Notes: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. 2. CE3 is for A version of TQFP (3 Chip Enable option) and 165 FBGA package only. 119 BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation Document #: 38-05540 Rev. *H
*
198 Champion Court
*
San Jose, CA 95134-1709 * 408-943-2600 Revised September 14, 2006
CY7C1360C CY7C1362C
.
Logic Block Diagram - CY7C1360C (256K x 36)
A0, A1, A
ADDRESS REGISTER
2
A[1:0]
MODE ADV CLK
Q1
ADSC ADSP
BWD DQD ,DQPD BYTE WRITE REGISTER DQC ,DQPC BYTE WRITE REGISTER DQB ,DQPB BYTE WRITE REGISTER DQA ,DQPA BYTE WRITE REGISTER
BURST COUNTER CLR AND Q0 LOGIC
DQD ,DQPD BYTE WRITE DRIVER DQC ,DQPC BYTE WRITE DRIVER DQB ,DQPB BYTE WRITE DRIVER DQA ,DQPA BYTE WRITE DRIVER
BWC
MEMORY ARRAY
SENSE AMPS
OUTPUT REGISTERS
OUTPUT BUFFERS E
BWB
DQs DQPA DQPB DQPC DQPD
BWA BWE
GW CE1 CE2 CE3 OE
ENABLE REGISTER
PIPELINED ENABLE
INPUT REGISTERS
ZZ
SLEEP CONTROL
Selection Guide
250 MHz Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current 2.8 250 40 200 MHz 3.0 220 40 166 MHz 3.5 180 40 Unit ns mA mA
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CY7C1360C CY7C1362C
Pin Configurations 100-Pin TQFP Pinout (3 Chip Enables) (A Version)
A A CE1 CE2 BWD BWC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE1 CE2 NC NC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A
DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA NC NC NC VDDQ VSSQ NC NC DQB DQB VSSQ VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSSQ DQB DQB DQPB NC VSSQ VDDQ NC NC NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
DQPC DQC DQc VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1360C (256K X 36)
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1362C (512K x 18)
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A NC NC VDDQ VSSQ NC DQPA DQA DQA VSSQ VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA NC NC VSSQ VDDQ NC NC NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
MODE A A A A A1 A0 NC/72M NC/36M VSS VDD NC/18M A A A A A A A A
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MODE A A A A A1 A0 NC/72M NC/36M VSS VDD NC/18M A A A A A A A A
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
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CY7C1360C CY7C1362C
Pin Configurations (continued) 100-Pin TQFP Pinout (2 Chip Enables) (AJ Version)
A A CE1 CE2 BWD BWC BWB BWA A VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE1 CE2 NC NC BWB BWA A VDD VSS CLK GW BWE OE ADSC ADSP ADV A A
DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA NC NC NC VDDQ VSSQ NC NC DQB DQB VSSQ VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSSQ DQB DQB DQPB NC VSSQ VDDQ NC NC NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
DQPC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1360C (256K X 36)
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1362C (512K x 18)
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A NC NC VDDQ VSSQ NC DQPA DQA DQA VSSQ VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA NC NC VSSQ VDDQ NC NC NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
MODE A A A A A1 A0 NC/72M NC/36M VSS VDD NC/18M NC A A A A A A A
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MODE A A A A A1 A0 NC/72M NC/36M VSS VDD NC/18M NC A A A A A A A
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
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CY7C1360C CY7C1362C
Pin Configurations (continued) 119-Ball BGA Pinout (2 Chip Enables with JTAG)
CY7C1360C (256K x 36)
1 A B C D E F G H J K L M N P R T U VDDQ NC/288M NC/144M DQC DQC VDDQ DQC DQC VDDQ DQD DQD VDDQ DQD DQD NC NC VDDQ 2 A CE2 A DQPC DQC DQC DQC DQC VDD DQD DQD DQD DQD DQPD A NC/72M TMS 3 A A A VSS VSS VSS BWC VSS NC VSS BWD VSS VSS VSS MODE A TDI 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD A TCK 5 A A A VSS VSS VSS BWB VSS NC VSS BWA VSS VSS VSS NC A TDO 6 A A A DQPB DQB DQB DQB DQB VDD DQA DQA DQA DQA DQPA A NC/36M NC 7 VDDQ NC/576M NC/1G DQB DQB VDDQ DQB DQB VDDQ DQA DQA VDDQ DQA DQA NC ZZ VDDQ
CY7C1362C (512K x 18)
1 A B C D E F G H J K L M N P R T U VDDQ NC/288M NC/144M DQB NC VDDQ NC DQB VDDQ NC DQB VDDQ DQB NC NC NC/72M VDDQ 2 A CE2 A NC DQB NC DQB NC VDD DQB NC DQB NC DQPB A A TMS 3 A A A VSS VSS VSS BWB VSS NC VSS VSS VSS VSS VSS MODE A TDI 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD NC/36M TCK 5 A A A VSS VSS VSS VSS VSS NC VSS BWA VSS VSS VSS NC A TDO 6 A A A DQPA NC DQA NC DQA VDD NC DQA NC DQA NC A A NC 7 VDDQ NC/576M NC/1G NC DQA VDDQ DQA NC VDDQ DQA NC VDDQ NC DQA NC ZZ VDDQ
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CY7C1360C CY7C1362C
Pin Configurations (continued) 165-Ball FBGA Pinout (3 Chip Enable with JTAG)
CY7C1360C (256K x 36)
1 A B C D E F G H J K L M N P R
NC/288M NC/144M DQPC DQC DQC DQC DQC NC DQD DQD DQD DQD DQPD NC MODE
2
A A NC DQC DQC DQC DQC VSS DQD DQD DQD DQD NC NC/72M NC/36M
3
CE1 CE2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A
4
BWC BWD VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
5
BWB BWA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI
TMS
6
CE3 CLK
7
BWE GW
8
ADSC OE
9
ADV ADSP
10
A A NC/1G DQB DQB DQB DQB NC DQA DQA DQA DQA NC A A
11
NC NC/576M DQPB DQB DQB DQB DQB ZZ DQA DQA DQA DQA DQPA A A
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC/18M A1 A0
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK
VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A
A
A
A
CY7C1362C (512K x 18)
1 A B C D E F G H J K L M N P R
NC/288M NC/144M NC NC NC NC NC NC DQB DQB DQB DQB DQPB NC MODE
2
A A NC DQB DQB DQB DQB VSS NC NC NC NC NC NC/72M NC/36M
3
CE1 CE2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A
4
BWB NC VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
5
NC BWA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI
TMS
6
CE3 CLK
7
BWE GW
8
ADSC OE
9
ADV ADSP
10
A A NC/1G NC NC NC NC NC DQA DQA DQA DQA NC A A
11
A NC/576M DQPA DQA DQA DQA DQA ZZ NC NC NC NC NC A A
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC/18M A1 A0
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK
VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A
A
A
A
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CY7C1360C CY7C1362C
Pin Definitions
Name A0, A1, A I/O InputSynchronous InputSynchronous InputSynchronous InputSynchronous InputClock InputSynchronous InputSynchronous InputSynchronous Description Address Inputs used to select one of the address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3[2]are sampled active. A1, A0 are fed to the two-bit counter.. Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM. Sampled on the rising edge of CLK. Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global Write is conducted (ALL bytes are written, regardless of the values on BWX and BWE). Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a Byte Write. Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3[2] to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3[2] to select/deselect the device. CE2 is sampled only when a new external address is loaded. Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. Not available for AJ package version. Not connected for BGA. Where referenced, CE3[2] is assumed active throughout this document for BGA. CE3 is sampled only when a new external address is loaded. Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. Advance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it automatically increments the address in a burst cycle. Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1, A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1, A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ZZ "Sleep" Input, active HIGH. When asserted HIGH places the device in a non-time-critical "sleep" condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition. Power supply inputs to the core of the device. Ground for the core of the device. Ground for the I/O circuitry. Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode pin has an internal pull-up. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be disconnected. This pin is not available on TQFP packages. Page 7 of 31
BWA, BWB BWC, BWD GW BWE CLK CE1
CE2 CE3[2]
OE
InputAsynchronous
ADV ADSP
InputSynchronous InputSynchronous
ADSC
InputSynchronous
ZZ
InputAsynchronous I/OSynchronous
DQs, DQPX
VDD VSS VSSQ VDDQ MODE
Power Supply Ground I/O Ground InputStatic JTAG serial output Synchronous
I/O Power Supply Power supply for the I/O circuitry.
TDO
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CY7C1360C CY7C1362C
Pin Definitions (continued)
Name TDI I/O Description JTAG serial input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is Synchronous not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. JTAG serial input Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is Synchronous not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. JTAGClock - - Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. No Connects. Not internally connected to the die These pins are not connected. They will be used for expansion to the 18M, 36M, 72M, 144M 288M, 576M, and 1G densities. access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single Read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will tri-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3[2] are all asserted active. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The Write signals (GW, BWE, and BWX) and ADV inputs are ignored during this first cycle. ADSP-triggered Write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the Write operation is controlled by BWE and BWX signals. The CY7C1360C/CY7C1362C provides Byte Write capability that is described in the Write Cycle Descriptions table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BWX) input, will selectively write to only the desired bytes. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1360C/CY7C1362C is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3[2] are all asserted active, and (4) the appropriate combination of the Write inputs (GW, BWE, and BWX) are asserted active to conduct a Write to the desired byte(s). ADSC-triggered Write accesses require a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The ADV input is ignored during this cycle. If a global Write is
TMS
TCK NC NC (18,36, 72, 144, 288, 576, 1G)
Functional Overview
All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 2.8 ns (250-MHz device). The CY7C1360C/CY7C1362C supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486TM processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte Write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWX) inputs. A Global Write Enable (GW) overrides all Byte Write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed Write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3[2]) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3[2] are all asserted active, and (3) the Write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs (A) is stored into the address advancement logic and the address register while being presented to the memory array. The corresponding data is allowed to propagate to the input of the output registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 2.8 ns (250-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always tri-stated during the first cycle of the Document #: 38-05540 Rev. *H
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CY7C1360C CY7C1362C
conducted, the data presented to the DQs is written into the corresponding address location in the memory core. If a Byte Write is conducted, only the selected bytes are written. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1360C/CY7C1362C is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1360C/CY7C1362C provides a two-bit wraparound counter, fed by A1, A0, that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both Read and Write burst operations are supported. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation "sleep" mode. Two clock cycles are required to enter into or exit from this "sleep" mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the "sleep" mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the "sleep" mode. CE1, CE2, CE3[2], ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table (MODE = Floating or VDD)
First Address A1, A0 00 01 10 11 Second Address A1, A0 01 00 11 10 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 10 01 00
Linear Burst Address Table (MODE = GND)
First Address A1, A0 00 01 10 11 Second Address A1, A0 01 10 11 00 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 00 01 10
ZZ Mode Electrical Characteristics
Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Sleep mode standby current Device operation to ZZ ZZ recovery time ZZ Active to sleep current ZZ Inactive to exit sleep current Test Conditions ZZ > VDD - 0.2V ZZ > VDD - 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled Min. Max. 50 2tCYC 2tCYC 0 Unit mA ns ns ns ns
2tCYC
Truth Table[3, 4, 5, 6, 7, 8]
Operation Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Sleep Mode, Power Down READ Cycle, Begin Burst READ Cycle, Begin Burst WRITE Cycle, Begin Burst Address Used None None None None None None External External External CE1 H L L L L X L L L CE2 X L X L X X H H H CE3 X X H X H X L L L ZZ ADSP ADSC ADV WRITE OE CLK L L L L L H L L L X L L H H X L L H L X X L L X X X L X X X X X X X X X X X X X X X X X L X X X X X X L H X L-H L-H L-H L-H L-H X L-H L-H L-H DQ Tri-State Tri-State Tri-State Tri-State Tri-State Tri-State Q Tri-State D
Notes: 3. X = "Don't Care." H = Logic HIGH, L = Logic LOW. 4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H. 5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only two chip selects CE1 and CE2. 7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the Write cycle. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are Tri-State when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
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CY7C1360C CY7C1362C
Truth Table[3, 4, 5, 6, 7, 8] (continued)
Operation READ Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Continue Burst READ Cycle, Continue Burst READ Cycle, Continue Burst READ Cycle, Continue Burst WRITE Cycle, Continue Burst WRITE Cycle, Continue Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst WRITE Cycle, Suspend Burst WRITE Cycle, Suspend Burst Address Used External External Next Next Next Next Next Next Current Current Current Current Current Current CE1 L L X X H H X H X X H H X H CE2 H H X X X X X X X X X X X X CE3 L L X X X X X X X X X X X X ZZ ADSP ADSC ADV WRITE OE CLK L L L L L L L L L L L L L L H H H H X X H X H H X X H X L L H H H H H H H H H H H H X X L L L L L L H H H H H H H H H H H H L L H H H H L L L H L H L H X X L H L H X X L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H DQ Q Tri-State Q Tri-State Q Tri-State D D Q Tri-State Q Tri-State D D
Partial Truth Table for Read/Write[5, 9]
Function (CY7C1360C) Read Read Write Byte A - (DQA and DQPA) Write Byte B - (DQB and DQPB) Write Bytes B, A Write Byte C - (DQC and DQPC) Write Bytes C, A Write Bytes C, B Write Bytes C, B, A Write Byte D - (DQD and DQPD) Write Bytes D, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, C Write Bytes D, C, A Write Bytes D, C, B Write All Bytes Write All Bytes GW H H H H H H H H H H H H H H H H H L BWE H L L L L L L L L L L L L L L L L X BWD X H H H H H H H H L L L L L L L L X BWC X H H H H L L L L H H H H L L L L X BWB X H H L L H H L L H H L L H H L L X BWA X H L H L H L H L H L H L H L H L X
Note: 9. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active.
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Truth Table for Read/Write[5, 9]
Function (CY7C1362C) Read Read Write Byte A - (DQA and DQPA) Write Byte B - (DQB and DQPB) Write Bytes B, A Write All Bytes Write All Bytes GW H H H H H H L BWE H L L L L L X BWB X H H L L L X BWA X H L H L L X
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1360C/CY7C1362C incorporates a serial boundary scan test access port (TAP) in the BGA package only. The TQFP package does not offer this functionality. This part operates in accordance with IEEE Standard 1149.1-1900, but doesn't have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 3.3V or 2.5V I/O logic levels. The CY7C1360C/CY7C1362C contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device.TAP Controller State Diagram The 0/1 next to each state represents the value of TMS at the
1 TEST-LOGIC RESET 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT-DR 1 EXIT1-DR 0 PAUSE-DR 1 0 EXIT2-DR 1 UPDATE-DR 1 0 0 0 1 0 1 1 SELECT IR-SCAN 0 CAPTURE-IR 0 SHIFT-IR 1 EXIT1-IR 0 PAUSE-IR 1 EXIT2-IR 1 UPDATE-IR 1 0 0 1 0 1
Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test MODE SELECT (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see TAP Controller State Diagram. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See Tap Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See Tap Controller State Diagram.)
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TAP Controller Block Diagram 0
Bypass Register
210
Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. Identification (ID) Register
TDI
Selection Circuitry
Instruction Register
31 30 29 . . . 2 1 0
Selection
Circuitry
TDO
Identification Register
x. . . . .210
Boundary Scan Register
TCK TMS TAP CONTROLLER
The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. TAP Instruction Set Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the I/O buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state.
Performing a TAP Reset A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the Tap Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary "01" pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed.
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IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture set-up plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required--that is, while data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions.
TAP Timing
1 Test Clock (TCK)
t TMSS
2
3
4
5
6
t TH t TMSH
t TL
t CYC
Test Mode Select (TMS)
t TDIS t TDIH
Test Data-In (TDI)
t TDOV t TDOX
Test Data-Out (TDO) DON'T CARE UNDEFINED
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TAP AC Switching Characteristics Over the Operating Range[10, 11]
Parameter Clock tTCYC tTF tTH tTL tTDOV tTDOX tTMSS tTDIS tCS Hold Times tTMSH tTDIH tCH TMS Hold after TCK Clock Rise TDI Hold after Clock Rise Capture Hold after Clock Rise 5 5 5 ns ns ns TCK Clock Cycle Time TCK Clock Frequency TCK Clock HIGH time TCK Clock LOW time TCK Clock LOW to TDO Valid TCK Clock LOW to TDO Invalid TMS Set-up to TCK Clock Rise TDI Set-up to TCK Clock Rise Capture Set-up to TCK Rise 0 5 5 5 20 20 10 50 20 ns MHz ns ns ns ns ns ns ns Description Min. Max. Unit
Output Times
Set-up Times
3.3V TAP AC Test Conditions
Input pulse levels ................................................ VSS to 3.3V Input rise and fall times ................................................... 1 ns Input timing reference levels ...........................................1.5V Output reference levels...................................................1.5V Test load termination supply voltage...............................1.5V
2.5V TAP AC Test Conditions
Input pulse levels................................................. VSS to 2.5V Input rise and fall time .....................................................1 ns Input timing reference levels......................................... 1.25V Output reference levels ................................................ 1.25V Test load termination supply voltage ............................ 1.25V
3.3V TAP AC Output Load Equivalent
1.5V 50 TDO Z O= 50 20pF
2.5V TAP AC Output Load Equivalent
1.25V 50 TDO Z O= 50 20pF
TAP DC Electrical Characteristics And Operating Conditions
(0C < TA < +70C; VDD = 3.3V 0.165V unless otherwise noted)[12] Parameter VOH1 VOH2 VOL1 Description Output HIGH Voltage Output HIGH Voltage Output LOW Voltage IOH = -4.0 mA IOH = -1.0 mA IOH = -100 A IOL = 8.0 mA IOL = 8.0 mA Conditions VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V Min. 2.4 2.0 2.9 2.1 0.4 0.4 Max. Unit V V V V V V
Notes: 10. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 11. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1 ns. 12. All voltages referenced to VSS (GND).
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TAP DC Electrical Characteristics And Operating Conditions
(0C < TA < +70C; VDD = 3.3V 0.165V unless otherwise noted)[12] (continued) Parameter VOL2 VIH VIL IX Description Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current GND < VIN < VDDQ IOL = 100 A Conditions VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V 2.0 1.7 -0.5 -0.3 -5 Min. Max. 0.2 0.2 VDD + 0.3 VDD + 0.3 0.7 0.7 5 Unit V V V V V V A
Identification Register Definitions
Instruction Field Revision Number (31:29) Device Depth (28:24)[13] Device Width (23:18) 119-BGA Device Width (23:18) 165- FBGA Cypress Device ID (17:12) Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0) CY7C1360C (256KX36) 000 01011 101000 000000 100110 00000110100 1 CY7C1362C (512KX18) 000 01011 101000 000000 010110 00000110100 1 Description Describes the version number Reserved for Internal Use Defines memory type and architecture Defines memory type and architecture Defines width and density Allows unique identification of SRAM vendor Indicates the presence of an ID register
Scan Register Sizes
Register Name Instruction Bypass ID Boundary Scan Order (119-ball BGA package) Boundary Scan Order (165-ball FBGA package) Bit Size (x36) 3 1 32 71 71 Bit Size (x18) 3 1 32 71 71
Identification Codes
Instruction EXTEST IDCODE SAMPLE Z RESERVED SAMPLE/PRELOAD RESERVED RESERVED BYPASS Code 000 001 010 011 100 101 110 111 Description Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. Do Not Use: This instruction is reserved for future use. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operations.
Note: 13. Bit #24 is "1" in the Register Definitions for both 2.5V and 3.3V versions of this device.
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165-ball FBGA Boundary Scan Order
CY7C1360C (256K x 36) Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ball ID B6 B7 A7 B8 A8 B9 A9 B10 A10 C11 E10 F10 G10 D10 D11 E11 F11 G11 H11 J10 K10 L10 M10 J11 K11 L11 M11 N11 R11 R10 P10 R9 P9 R8 P8 P11 Signal Name CLK GW BWE OE ADSC ADSP ADV A A DQPB DQB DQB DQB DQB DQB DQB DQB DQB ZZ DQA DQA DQA DQA DQA DQA DQA DQA DQPA A A A A A A A A Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 ball ID R6 P6 R4 P4 R3 P3 R1 N1 L2 K2 J2 M2 M1 L1 K1 J1 Internal G2 F2 E2 D2 G1 F1 E1 D1 C1 B2 A2 A3 B3 B4 A4 A5 B5 A6 Signal Name A0 A1 A A A A MODE DQPD DQD DQD DQD DQD DQD DQD DQD DQD Internal DQC DQC DQC DQC DQC DQC DQC DQC DQPC A A CE1 CE2 BWD BWC BWB BWA CE3 Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ball ID B6 B7 A7 B8 A8 B9 A9 B10 A10 A11 Internal Internal Internal C11 D11 E11 F11 G11 H11 J10 K10 L10 M10 Internal Internal Internal Internal Internal R11 R10 P10 R9 P9 R8 P8 P11 CY7C1362C (512K x 18) Signal Name CLK GW BWE OE ADSC ADSP ADV A A A Internal Internal Internal DQPA DQA DQA DQA DQA ZZ DQA DQA DQA DQA Internal Internal Internal Internal Internal A A A A A A A A Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 ball ID R6 P6 R4 P4 R3 P3 R1 Internal Internal Internal Internal N1 M1 L1 K1 J1 Internal G2 F2 E2 D2 Internal Internal Internal Internal Internal B2 A2 A3 B3 Internal Internal A4 B5 A6 Signal Name A0 A1 A A A A MODE Internal Internal Internal Internal DQPB DQB DQB DQB DQB Internal DQB DQB DQB DQB Internal Internal Internal Internal Internal A A CE1 CE2 Internal Internal BWB BWA CE3
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119-ball BGA Boundary Scan Order
CY7C1360C (256K x 36) Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ball ID K4 H4 M4 F4 B4 A4 G4 C3 B3 D6 H7 G6 E6 D7 E7 F6 G7 H6 T7 K7 L6 N6 P7 N7 M6 L7 K6 P6 T4 A3 C5 B5 A5 C6 A6 B6 Signal Name CLK GW BWE OE ADSC ADSP ADV A A DQPB DQB DQB DQB DQB DQB DQB DQB DQB ZZ DQA DQA DQA DQA DQA DQA DQA DQA DQPA A A A A A A A A Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 ball ID P4 N4 R6 T5 T3 R2 R3 P2 P1 L2 K1 N2 N1 M2 L1 K2 Internal H1 G2 E2 D1 H2 G1 F2 E1 D2 C2 A2 E4 B2 L3 G3 G5 L5 Internal Signal Name A0 A1 A A A A MODE DQPD DQD DQD DQD DQD DQD DQD DQD DQD Internal DQC DQC DQC DQC DQC DQC DQC DQC DQPC A A CE1 CE2 BWD BWC BWB BWA Internal Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ball ID K4 H4 M4 F4 B4 A4 G4 C3 B3 T2 Internal Internal Internal D6 E7 F6 G7 H6 T7 K7 L6 N6 P7 Internal Internal Internal Internal Internal T6 A3 C5 B5 A5 C6 A6 B6 CY7C1362C (512K x 18) Signal Name CLK GW BWE OE ADSC ADSP ADV A A A Internal Internal Internal DQPA DQA DQA DQA DQA ZZ DQA DQA DQA DQA Internal Internal Internal Internal Internal A A A A A A A A Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 ball ID P4 N4 R6 T5 T3 R2 R3 Internal Internal Internal Internal P2 N1 M2 L1 K2 Internal H1 G2 E2 D1 Internal Internal Internal Internal Internal C2 A2 E4 B2 Internal Internal G3 L5 Internal Signal Name A0 A1 A A A A MODE Internal Internal Internal Internal DQPB DQB DQB DQB DQB Internal DQB DQB DQB DQB Internal Internal Internal Internal Internal A A CE1 CE2 Internal Internal BWB BWA Internal
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Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VDD Relative to GND........ -0.5V to +4.6V Supply Voltage on VDDQ Relative to GND ...... -0.5V to +VDD DC Voltage Applied to Outputs in Tri-State..........................................-0.5V to VDDQ + 0.5V Range Commercial Industrial DC Input Voltage .................................. -0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA
Operating Range
Ambient Temperature 0C to +70C -40C to +85C VDD 3.3V - 5%/+10% VDDQ 2.5V - 5% to VDD
Electrical Characteristics Over the Operating Range[14, 15]
Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage[14] Input LOW Voltage[14] Input Leakage Current except ZZ and MODE Input Current of MODE Input Current of ZZ IOZ IDD for 3.3V I/O for 2.5V I/O for 3.3V I/O, IOH = -4.0 mA for 2.5V I/O, IOH = -1.0 mA for 3.3V I/O, IOL = 8.0 mA for 2.5V I/O, IOL = 1.0 mA for 3.3V I/O for 2.5V I/O for 3.3V I/O for 2.5V I/O GND VI VDDQ Input = VSS Input = VDD Input = VSS Input = VDD Output Leakage Current GND VI VDDQ, Output Disabled VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, Device Deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC 4-ns cycle, 250 MHz 5-ns cycle, 200 MHz 6-ns cycle, 166 MHz ISB1 Automatic CE Power-down Current--TTL Inputs Automatic CE Power-down Current--CMOS Inputs Automatic CE Power-down Current--CMOS Inputs Automatic CE Power-down Current--TTL Inputs 4-ns cycle, 250 MHz 5-ns cycle, 200 MHz 6-ns cycle, 166 MHz -5 -5 30 5 250 220 180 130 120 110 40 2.0 1.7 -0.3 -0.3 -5 -30 5 Test Conditions Min. 3.135 3.135 2.375 2.4 2.0 0.4 0.4 VDD + 0.3V VDD + 0.3V 0.8 0.7 5 Max. 3.6 VDD 2.625 Unit V V V V V V V V V V V A A A A A A mA mA mA mA mA mA mA
ISB2
VDD = Max, Device Deselected, All speeds VIN 0.3V or VIN > VDDQ - 0.3V, f=0 VDD = Max, Device Deselected, or 4-ns cycle, 250 MHz VIN 0.3V or VIN > VDDQ - 0.3V 5-ns cycle, 200 MHz f = fMAX = 1/tCYC 6-ns cycle, 166 MHz VDD = Max, Device Deselected, VIN VIH or VIN VIL, f = 0 All Speeds
ISB3
120 110 100 40
mA mA mA mA
ISB4
Notes: 14. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2). 15. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
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Capacitance[16]
Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VDD = 3.3V VDDQ = 2.5V 100 TQFP Max. 5 5 5 119 BGA Max. 5 5 7 165 FBGA Max. 5 5 7 Unit pF pF pF
Thermal Resistance[16]
Parameter JA JC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 100 TQFP Package 29.41 6.13 119 BGA Package 34.1 14.0 165 FBGA Package 16.8 3 Unit C/W C/W
AC Test Loads and Waveforms
3.3V I/O Test Load
OUTPUT Z0 = 50 3.3V OUTPUT RL = 50 5 pF INCLUDING JIG AND SCOPE 2.5V Z0 = 50 OUTPUT RL = 50 5 pF VT = 1.25V INCLUDING JIG AND SCOPE R =1538 R = 351 R = 317 VDDQ 10% GND 1 ns ALL INPUT PULSES 90% 90% 10% 1 ns
VT = 1.5V (a)
(b)
R = 1667 VDDQ 10% GND 1 ns
(c)
ALL INPUT PULSES 90% 90% 10% 1 ns
2.5V I/O Test Load
OUTPUT
(a)
(b)
(c)
Note: 16. Tested initially and after any design or process change that may affect these parameters.
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Switching Characteristics Over the Operating Range [17, 18]
-250 Parameter tPOWER Clock tCYC tCH tCL Output Times tCO tDOH tCLZ tCHZ tOEV tOELZ tOEHZ Set-up Times tAS tADS tADVS tWES tDS tCES Hold Times tAH tADH tADVH tWEH tDH tCEH Address Hold after CLK Rise ADSP, ADSC Hold after CLK Rise ADV Hold after CLK Rise GW, BWE, BWX Hold after CLK Rise Data Input Hold after CLK Rise Chip Enable Hold after CLK Rise 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns ns ns Address Set-up before CLK Rise ADSC, ADSP Set-up before CLK Rise ADV Set-up before CLK Rise GW, BWE, BWX Set-up before CLK Rise Data Input Set-up before CLK Rise Chip Enable Set-up before CLK Rise 1.4 1.4 1.4 1.4 1.4 1.4 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 ns ns ns ns ns ns Data Output Valid after CLK Rise Data Output Hold after CLK Rise Clock to Low-Z
[20, 21, 22]
-200 Max. Min. 1 5.0 2.0 2.0 2.8 3.0 1.25 1.25 2.8 2.8 1.25 0 2.8 3.0 3.0 3.0 0 Max. 1 6.0 2.4 2.4
-166 Min. Max. Unit ms ns ns ns 3.5 1.25 1.25 1.25 3.5 3.5 3.5 ns ns ns ns ns ns ns
Description VDD(Typical) to the First Access Clock Cycle Time Clock HIGH Clock LOW
[19]
Min. 1 4.0 1.8 1.8
1.25 1.25 1.25 0
Clock to High-Z[20, 21, 22] OE LOW to Output Valid OE LOW to Output OE HIGH to Output Low-Z[20, 21, 22] High-Z[20, 21, 22]
Notes: 17. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 18. Test conditions shown in (a) of AC Test Loads unless otherwise noted. 19. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated. 20. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 21. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 22. This parameter is sampled and not 100% tested.
Document #: 38-05540 Rev. *H
Page 20 of 31
CY7C1360C CY7C1362C
Switching Waveforms
Read Cycle Timing[23]
t CYC
CLK t CH t ADS ADSP tADS ADSC tAS A1 tWES GW, BWE, BWx tCES CE tADVS tADVH ADV ADV suspends burst. OE tOEV t OEHZ t CLZ Data Out (Q) High-Z Q(A1) t CO Burst wraps around to its initial state Single READ BURST READ t OELZ tCO tDOH Q(A2) Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) t CHZ Q(A2 + 1) tCEH Deselect cycle tWEH tAH tADH t ADH t CL
ADDRESS
A2
A3 Burst continued with new base address
DON'T CARE
UNDEFINED
Note: 23. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05540 Rev. *H
Page 21 of 31
CY7C1360C CY7C1362C
Switching Waveforms (continued)
Write Cycle Timing[23, 24]
t CYC
CLK tCH tADS ADSP ADSC extends burst tADS tADH tADH tCL
tADS ADSC tAS A1 tAH
tADH
ADDRESS
A2 Byte write signals are ignored for first cycle when ADSP initiates burst
A3
tWES tWEH
BWE, BWX tWES tWEH GW tCES CE t t ADVS ADVH ADV ADV suspends burst tCEH
OE tDS tDH
Data In (D)
High-Z
t OEHZ
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q) BURST READ Single WRITE BURST WRITE Extended BURST WRITE
DON'T CARE
UNDEFINED
Note: 24. Full width Write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05540 Rev. *H
Page 22 of 31
CY7C1360C CY7C1362C
Switching Waveforms (continued)
Read/Write Cycle Timing[23, 25, 26]
tCYC
CLK tCH tADS ADSP tADH tCL
ADSC tAS tAH
ADDRESS
A1
A2
A3 tWES tWEH
A4
A5
A6
BWE, BWX tCES CE tCEH
ADV
OE tCO tDS tDH tOELZ Data In (D) High-Z tCLZ Data Out (Q) High-Z Q(A1) Back-to-Back READs tOEHZ Q(A2) Single WRITE D(A3) D(A5) D(A6)
Q(A4)
Q(A4+1) BURST READ
Q(A4+2)
Q(A4+3) Back-to-Back WRITEs
DON'T CARE
UNDEFINED
Notes: 25. The data bus (Q) remains in high-Z following a Write cycle, unless a new Read access is initiated by ADSP or ADSC. 26. GW is HIGH.
Document #: 38-05540 Rev. *H
Page 23 of 31
CY7C1360C CY7C1362C
Switching Waveforms (continued)
ZZ Mode Timing[27, 28]
CLK
t ZZ t ZZREC
ZZ
t ZZI
I
SUPPLY I DDZZ t RZZI DESELECT or READ Only
ALL INPUTS (except ZZ)
Outputs (Q)
High-Z
DON'T CARE
Notes: 27. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 28. DQs are in High-Z when exiting ZZ sleep mode.
Document #: 38-05540 Rev. *H
Page 24 of 31
CY7C1360C CY7C1362C
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 166 Ordering Code CY7C1360C-166AXC CY7C1362C-166AXC CY7C1360C-166AJXC CY7C1362C-166AJXC CY7C1360C-166BGC CY7C1362C-166BGC CY7C1360C-166BGXC CY7C1362C-166BGXC CY7C1360C-166BZC CY7C1362C-166BZC CY7C1360C-166BZXC CY7C1362C-166BZXC CY7C1360C-166AXI CY7C1362C-166AXI CY7C1360C-166AJXI CY7C1362C-166AJXI CY7C1360C-166BGI CY7C1362C-166BGI CY7C1360C-166BGXI CY7C1362C-166BGXI CY7C1360C-166BZI CY7C1362C-166BZI CY7C1360C-166BZXI CY7C1362C-166BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (3 Chip Enable) 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (2 Chip Enable) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Industrial 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free Package Diagram Part and Package Type Operating Range Commercial
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (3 Chip Enable) 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (2 Chip Enable) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm)
Document #: 38-05540 Rev. *H
Page 25 of 31
CY7C1360C CY7C1362C
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. 200 CY7C1360C-200AXC CY7C1362C-200AXC CY7C1360C-200AJXC CY7C1362C-200AJXC CY7C1360C-200BGC CY7C1362C-200BGC CY7C1360C-200BGXC CY7C1362C-200BGXC CY7C1360C-200BZC CY7C1362C-200BZC CY7C1360C-200BZXC CY7C1362C-200BZXC CY7C1360C-200AXI CY7C1362C-200AXI CY7C1360C-200AJXI CY7C1362C-200AJXI CY7C1360C-200BGI CY7C1362C-200BGI CY7C1360C-200BGXI CY7C1362C-200BGXI CY7C1360C-200BZI CY7C1362C-200BZI CY7C1360C-200BZXI CY7C1362C-200BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (3 Chip Enable) 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (2 Chip Enable) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Industrial 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (3 Chip Enable) 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (2 Chip Enable) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Commercial
Document #: 38-05540 Rev. *H
Page 26 of 31
CY7C1360C CY7C1362C
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. 250 CY7C1360C-250AXC CY7C1362C-250AXC CY7C1360C-250AJXC CY7C1362C-250AJXC CY7C1360C-250BGC CY7C1362C-250BGC CY7C1360C-250BGXC CY7C1362C-250BGXC CY7C1360C-250BZC CY7C1362C-250BZC CY7C1360C-250BZXC CY7C1362C-250BZXC CY7C1360C-250AXI CY7C1362C-250AXI CY7C1360C-250AJXI CY7C1362C-250AJXI CY7C1360C-250BGI CY7C1362C-250BGI CY7C1360C-250BGXI CY7C1362C-250BGXI CY7C1360C-250BZI CY7C1362C-250BZI CY7C1360C-250BZXI CY7C1362C-250BZXI 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (3 Chip Enable) 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (2 Chip Enable) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Industrial 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free 51-85180 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (3 Chip Enable) 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free (2 Chip Enable) 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Commercial
Document #: 38-05540 Rev. *H
Page 27 of 31
CY7C1360C CY7C1362C
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) (51-85050)
16.000.20 14.000.10
100 1 81 80
1.400.05
0.300.08
22.000.20
20.000.10
0.65 TYP.
30 31 50 51
121 (8X)
SEE DETAIL
A
0.20 MAX. 1.60 MAX. 0 MIN. SEATING PLANE 0.25 GAUGE PLANE STAND-OFF 0.05 MIN. 0.15 MAX.
NOTE: 1. JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS
0-7
R 0.08 MIN. 0.20 MAX.
0.600.15 0.20 MIN. 1.00 REF.
DETAIL
51-85050-*B
A
Document #: 38-05540 Rev. *H
0.10
R 0.08 MIN. 0.20 MAX.
Page 28 of 31
CY7C1360C CY7C1362C
Package Diagrams (continued)
119-Ball PBGA (14 x 22 x 2.4 mm) (51-85115)
O0.05 M C O0.25 M C A B A1 CORNER O0.750.15(119X) O1.00(3X) REF. 1 A B C E F G 22.000.20 H J K L M N P R T U 10.16 19.50 20.32 1.27 D 2 34 5 6 7 7 6 5 4321 A B C D E F G H J K L M N P R T U
1.27 0.70 REF. A 3.81
12.00 B 2.40 MAX.
7.62 14.000.20
0.900.05
0.25 C
30 TYP.
0.15(4X) 0.15 C
51-85115-*B
SEATING PLANE
0.56
C 0.600.10
Document #: 38-05540 Rev. *H
Page 29 of 31
CY7C1360C CY7C1362C
Package Diagrams (continued)
165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D 165-Ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW TOP VIEW TOP VIEW PIN 1 CORNER PIN 1 CORNER
1 A B C D E F G 2 3 4 5 6 7 8 9 10 11 11 10 9 8 7
PIN BOTTOM VIEW 1 CORNER PIN 1 CORNER O0.05 M C O0.25 MO0.05 M C CAB O0.25 O0.50 -0.06 (165X) M C A B
+0.14 4 6 5
O0.50 -0.06 (165X)
3 +0.14 2 1
1 A B
2
3
4
5
6
7
8
9
10
11
11
10
9
8
7
6
5
4
3
2
1A
B
A B C D E F G H J K L M N P R
D E F
1.00
C
1.00
C D E F G
15.000.10
15.000.10
15.000.10
H J K L M N P R
G H J K
14.00 15.000.10
H
14.00
J K
M N P R
7.00
L
7.00
L M N P R
A A
A A 5.00 5.00 10.00 10.00 B B 13.000.10 13.000.10 0.15(4X) B B 13.000.10
1.00 1.00
13.000.10
1.40 MAX.
0.530.05 0.25 C
0.15(4X)
SEATING PLANE 0.36 C 0.36 C SEATING PLANE 0.350.06
NOTES : NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT : 0.475gNON-SOLDER MASK DEFINED (NSMD) SOLDER PAD TYPE : JEDEC REFERENCE : MO-216 / DESIGN 4.6C PACKAGE WEIGHT : 0.475g PACKAGE CODE : BB0AC : MO-216 / DESIGN 4.6C JEDEC REFERENCE PACKAGE CODE : BB0AC
51-85180-*A
0.25 C
1.40 MAX.
0.530.05
0.15 C
0.15 C
i486 is a trademark, and Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM Corporation. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05540 Rev. *H
0.350.06
51-85180-*A
Page 30 of 31
(c) Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1360C CY7C1362C
Document History Page
Document Title: CY7C1360C/CY7C1362C 9-Mbit (256K x 36/512K x 18) Pipelined SRAM Document Number: 38-05540 REV. ** *A ECN NO. 241690 278130 Issue Date See ECN See ECN Orig. of Change RKF RKF New data sheet Changed Boundary Scan order to match the B rev of these devices Changed TQFP pkg to Lead-free TQFP in Ordering Information section Added comment of Lead-free BG and BZ packages availability Changed ISB1 and ISB3 from DC Characteristics table as follows: ISB1: 225 MHz -> 130 mA, 200 MHz -> 120 mA, 167 MHz -> 110 mA ISB3: 225 MHz -> 120 mA, 200 MHz -> 110 mA, 167 MHz -> 100 mA Changed IDDZZ to 50 mA Added BG and BZ pkg lead-free part numbers to ordering info section Changed frequency of 225 MHz into 250 MHz Added tCYC of 4.0 ns for 250 MHz Changed JA and JC for TQFP Package from 25 and 9 C/W to 29.41 and 6.13 C/W respectively Changed JA and JC for BGA Package from 25 and 6 C/W to 34.1 and 14.0 C/W respectively Changed JA and JC for FBGA Package from 27 and 6 C/W to 16.8 and 3.0 C/W respectively Modified address expansion as per JEDEC Standard Removed comment of Lead-free BG and BZ packages availability Unshaded 200 and 166 MHz speed bins in the AC/DC Table and Selection Guide Added Address Expansion pins in the Pin Definition Table Changed Device Width (23:18) for 119-BGA from 000000 to 101000 Added separate row for 165 -FBGA Device Width (23:18) Modified VOL, VOH test conditions Updated Ordering Information Table Changed from Preliminary to Final Removed Shading on 250MHz Speed Bin in Selection Guide and AC/DC Table Changed ISB2 from 30 to 40 mA Updated Ordering Information Table Modified test condition in note# 16 from VDDQ < VDD to VDDQ VDD Changed address of Cypress Semiconductor Corporation on Page# 1 from "3901 North First Street" to "198 Champion Court" Changed three-state to tri-state on page# 9 & page# 10 Modified "Input Load" to "Input Leakage Current except ZZ and MODE" in the Electrical Characteristics Table Replaced Package Name column with Package Diagram in the Ordering Information table Updated Ordering Information Table Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC Switching Characteristics table. Updated the Ordering Information table. Description of Change
*B
248929
See ECN
VBL
*C
323636
See ECN
PCI
*D
332879
See ECN
PCI
*E
357258
See ECN
PCI
*F *G
377095 408298
See ECN See ECN
PCI RXU
*H
501793
See ECN
VKN
Document #: 38-05540 Rev. *H
Page 31 of 31

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